| PART |
Description |
Maker |
| BFP193 Q62702-F1282 BFP193Q62702-F1282 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFR193W Q62702-F1510 |
From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
|
http://
SIEMENS[Siemens Semiconductor Group]
|
| BFP193W Q62702-F1577 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
| LTC6401-8 LTC6401CUD-8-PBF LTC6401CUD-8-TRPBF LTC6 |
2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz; Package: QFN; No of Pins: 16; Temperature Range: -40°C to 85°C 1-CH 16-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, PQCC16
2.2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz
|
Linear Technology, Corp.
|
| HMC431LP4E HMC431LP408 |
MMIC VCO w/ BUFFER AMPLIFIER, 5.5 - 6.1 GHz
VCO, 5500 MHz - 6100 MHz
|
Hittite Microwave Corporation
Hittite Microwave Corporati...
|
| SY89872U0708 |
2.5V, 2GHz ANY DIFF. IN-TO-LVDS
|
Micrel Semiconductor
|
| MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| BFR92W Q62702-F1488 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) NPN硅射频晶体管（对于宽带放大器高达2GHz和快速的非饱和由0.5毫安0毫安的集电极电流开关）
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TD6116P TD6118P TD6120P TD6122P TD6124P TD6126P EE |
1.2GHz PRESCALER
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| Q62702-F543 BFR14C |
NPN SILICON MICROWAVE TRANSISTOR UP TO 2GHz
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
|
| SY89231U SY89231UMG SY89231UMGTR |
3.2GHz Precision, LVDS ÷3, ÷5 Clock Divider
|
Micrel Semiconductor
|
